Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection

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	Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection
	Gao, Na ; Lin, Wei ; Chen, Xue ; Huang, ; Li, Shuping ; Li, Jinchai ; Chen, Hangyang ; Yang, Xu ; Ji, Li ; Yu, Edward T. ; Kang, Junyong ; Huang K(黄凯) ; Li SP(李书平) ; Li JC(李金钗) ; Chen HY(陈航洋) ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1039/c4nr04286g
	2014
关键词	Atoms Gallium nitride High resolution transmission electron microscopy Light absorption Metallorganic vapor phase epitaxy Organometallics Photodetectors Quantum optics Superlattices
英文摘要	Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (～0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters. This journal is
语种	英语
出版者	Royal Society of Chemistry
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92194]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Gao, Na,Lin, Wei,Chen, Xue,et al. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection[J]. http://dx.doi.org/10.1039/c4nr04286g,2014.
APA	Gao, Na.,Lin, Wei.,Chen, Xue.,Huang,.,Li, Shuping.,...&康俊勇.(2014).Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.http://dx.doi.org/10.1039/c4nr04286g.
MLA	Gao, Na,et al."Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection".http://dx.doi.org/10.1039/c4nr04286g (2014).