Structural and electronic properties of hydrogenated bilayer boron nitride | |
Gao Tan-Hua ; Wu Shun-Qing ; Zhang Peng ; Zhu Zi-Zhong ; Gao TH(高潭华) ; Wu SQ(吴顺情) ; Zhu ZZ(朱梓忠) | |
刊名 | http://dx.doi.org/10.7498/aps.63.016801 |
2014 | |
关键词 | TOTAL-ENERGY CALCULATIONS AUGMENTED-WAVE METHOD BASIS-SET GRAPHENE MOLECULES |
英文摘要 | National Natural Science Foundation of China [11004165, 21233004]; Department of Education of Fujian Province [JK2013054]; The structural and electronic properties of hydrogenated bilayer boron nitride (BN) were studied by employing the first-principles calculations. Six major polymorphic structures of hydrogenated bilayer BN are considered. Calculated results show that, among them, the AB-BN and AA-BN structures are the most stable ones. The analysis on the energy bands and electronic properties of the two most stable structures are then performed. Structures of AB-BN and AA-BN are both semiconducting with direct band gaps, and the gaps are 1.47 eV and 1.32 eV, respectively, calculated using the GGA method. Since GGA usually severely underestimates the band gap, the hybrid density functional calculations are then conducted, which suggests that the band gaps are 2.52 eV and 2.34 eV for AB-BN and AA-BN structures, respectively. In the most stable structures of AB-BN and AA-BN, B-N bonds show mainly covalent characters, while B-H and N-H bonds exhibit clear ionic characteristics. Moreover, the band gap of hydrogenated bilayer BN atomic sheet can be continuously modulated by biaxial strains. When the lattice constant is compressed by around 8%, the electronic character of the atomic sheet changes from semiconducting into metallic. |
语种 | 英语 |
出版者 | CHINESE PHYSICAL SOC |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/92096] |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Gao Tan-Hua,Wu Shun-Qing,Zhang Peng,et al. Structural and electronic properties of hydrogenated bilayer boron nitride[J]. http://dx.doi.org/10.7498/aps.63.016801,2014. |
APA | Gao Tan-Hua.,Wu Shun-Qing.,Zhang Peng.,Zhu Zi-Zhong.,高潭华.,...&朱梓忠.(2014).Structural and electronic properties of hydrogenated bilayer boron nitride.http://dx.doi.org/10.7498/aps.63.016801. |
MLA | Gao Tan-Hua,et al."Structural and electronic properties of hydrogenated bilayer boron nitride".http://dx.doi.org/10.7498/aps.63.016801 (2014). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论