Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

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	Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents
	Lin, Siqi ; Shih, Tienmo ; Lu, Yijun ; Gao, Yulin ; Zhu, Lihong ; Chen, Guolong ; Wu, Biqing ; Guo, Ziquan ; Zhang, Jihong ; Fan, Xianguang ; Chang, Richard Rugin ; Chen, Zhong ; Gao YL(高玉琳) ; Fan XG(范贤光) ; Chen Z(陈忠)
刊名	http://dx.doi.org/10.1109/TED.2013.2280644
	2013
英文摘要	University-Industry Cooperation in Fujian Province [2011H6025, 2013H6024]; NNSF of China [11104230, 61102030]; 863 project of China [2013AA03A107]; Fujian Province [2012H0039]; We propose an experimental method that determines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-relationship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91806]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Lin, Siqi,Shih, Tienmo,Lu, Yijun,et al. Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents[J]. http://dx.doi.org/10.1109/TED.2013.2280644,2013.
APA	Lin, Siqi.,Shih, Tienmo.,Lu, Yijun.,Gao, Yulin.,Zhu, Lihong.,...&陈忠.(2013).Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents.http://dx.doi.org/10.1109/TED.2013.2280644.
MLA	Lin, Siqi,et al."Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents".http://dx.doi.org/10.1109/TED.2013.2280644 (2013).