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	Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells
	Ren, Xianpei ; Cai, Lihan ; Fan, Baodian ; Cheng, Haoran ; Zheng, Songsheng ; Chen, Chao ; Chen C(陈朝)
刊名	http://dx.doi.org/10.1051/epjap/2013130360
	2013
关键词	CARRIER LIFETIME CZOCHRALSKI SILICON CRYSTALLINE SILICON BORON INJECTION IRON COMPLEXES LEVEL
英文摘要	National Natural Science Foundation of China [61076056]; This letter focuses on the evolution under illumination of the minority carrier lifetime and conversion efficiency of p-type gallium (Ga) co-doped solar grade multicrystalline silicon wafers and solar cells. We present experimental data regarding the concentration of boron-oxygen (B-O) defects in this silicon when subjected to illumination, and the concentration was found to depend on [B]-[P] rather than [B] or the net doping p(0)([B] + [Ga] - [P]). This result implies that the compensated B is unable to form the B-O defect. Minority carrier lifetime and EQE measurements at different degradation states indicate that the B-O defect and Fe-acceptor pairs are the two key centers contributed to LID in this material.
语种	英语
出版者	EDP SCIENCES S A
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91767]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Ren, Xianpei,Cai, Lihan,Fan, Baodian,et al. Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells[J]. http://dx.doi.org/10.1051/epjap/2013130360,2013.
APA	Ren, Xianpei.,Cai, Lihan.,Fan, Baodian.,Cheng, Haoran.,Zheng, Songsheng.,...&陈朝.(2013).Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells.http://dx.doi.org/10.1051/epjap/2013130360.
MLA	Ren, Xianpei,et al."Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells".http://dx.doi.org/10.1051/epjap/2013130360 (2013).

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