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	Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system
	Huang, M. C. ; Wu, L. Q. ; Zhu, Z. H. ; Huang MC(黄美纯)
	1999-07
关键词	BAND OFFSETS SI/SI1-X-YGEXCY HETEROJUNCTIONS ALLOYS SI1-YCY SI(001) CARBON HETEROSTRUCTURES SILICON LAYERS GROWTH
英文摘要	The electronic structures of strained Si1-x-yGexCy (y less than or equal to 0.09) alloys on Si(001) have been studied by the ab initio pseudopotential method within the local density functional theory. The variations of the minimum band gap, the valence-band offset and the strain properties in the heterojunction interface are calculated together with the average bond energy theory. It is found that the dependences of the minimum band gap and the valence-band offset on the alloy composition change around the point of zero lattice mismatch. A comparison between our theoretical results and the available experimental data indicates that some of the contradictions from different research groups can be reasonably explained.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70564]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Huang, M. C.,Wu, L. Q.,Zhu, Z. H.,et al. Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system[J],1999.
APA	Huang, M. C.,Wu, L. Q.,Zhu, Z. H.,&黄美纯.(1999).Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system..
MLA	Huang, M. C.,et al."Variation of electronic structure with C content in Si1-x-yGexCy/Si(001) system".(1999).

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