Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing

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	Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing
	Zhang, Y. ; Liao, L. H. ; Li, C. ; Lai, H. K. ; Chen, S. Y. ; Kang, J. Y. ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1063/1.3010301
	2008-11-01
关键词	STRAINED FILMS NANOSTRUCTURES INSTABILITY MICROSCOPY INTERFACE SILICON GROWTH LAYER
英文摘要	National Basic Research Program of China [2007CB613404]; National Natural Science Foundation of China [60676027, 50672079]; Key Projects of Fujian Science and Technology [2006H0036]; Program for New Century Excellent Talents in University; The morphological evolution of SiGe films was investigated during vacuum thermal annealing. We found that Ge islands preferentially form in the process of decomposition of native oxide covering the SiGe layer, while pits form as an effective means of relaxing strain in the SiGe layer passivated with hydrogen during vacuum thermal annealing. The formation of small size Ge islands weakly depends on the strain relaxation of the SiGe layer. The size of Ge islands increases with Ge content in the initial SiGe layer and the maximum density of Ge islands is obtained for the SiGe layer with a lower Ge content of 0.06 among the investigated samples. A mechanism to form Ge islands on SiGe films rather than strain driven is proposed in terms of surface potential energy profile induced by the process of decomposition of native oxide. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3010301]
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70213]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhang, Y.,Liao, L. H.,Li, C.,et al. Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing[J]. http://dx.doi.org/10.1063/1.3010301,2008.
APA	Zhang, Y..,Liao, L. H..,Li, C..,Lai, H. K..,Chen, S. Y..,...&陈松岩.(2008).Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing.http://dx.doi.org/10.1063/1.3010301.
MLA	Zhang, Y.,et al."Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing".http://dx.doi.org/10.1063/1.3010301 (2008).