Epitaxial Growth of Germanium on Silicon for Light Emitters

CORC > 厦门大学 > 物理技术－已发表论文

	Epitaxial Growth of Germanium on Silicon for Light Emitters
	Chen, Chengzhao ; Li, Cheng ; Huang, Shihao ; Zheng, Yuanyu ; Lai, Hongkai ; Chen, Songyan ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1155/2012/768605
	2012
关键词	CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GE THREADING-DISLOCATION DENSITIES MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE SI LAYERS INTEGRATION TRANSISTORS INSULATOR
英文摘要	National Basic Research Program of China [2007CB613404, 2012CB933503]; National Natural Science Foundation of China [61036003, 60837001, 61176092]; Fundamental Research Funds for the Central Universities [2010121056]; This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of similar to 4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70207]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen, Chengzhao,Li, Cheng,Huang, Shihao,et al. Epitaxial Growth of Germanium on Silicon for Light Emitters[J]. http://dx.doi.org/10.1155/2012/768605,2012.
APA	Chen, Chengzhao.,Li, Cheng.,Huang, Shihao.,Zheng, Yuanyu.,Lai, Hongkai.,...&陈松岩.(2012).Epitaxial Growth of Germanium on Silicon for Light Emitters.http://dx.doi.org/10.1155/2012/768605.
MLA	Chen, Chengzhao,et al."Epitaxial Growth of Germanium on Silicon for Light Emitters".http://dx.doi.org/10.1155/2012/768605 (2012).