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	Research of different structure integrated photodetectors in standard CMOS technology - art no 68381O
	Cheng, Xiang ; Bian, Jiantao ; Chen, Chao ; Chen, Wei ; Zhang, X ; Ming, H ; Che, MY ; Chen C(陈朝)
	2008
关键词	integrated photodetector spice model OEIC CMOS
英文摘要	Three kinds of structure photodetectors, N+/N-Well/P-Substrate, P+/N-Well/P-Substrate and finger N+/N-Well/P-Substrate, have been fabricated in CSMC 0.5 mu m CMOS process. The characteristics of different photodetectors are comparatively tested. The N+/N-Well/P-Substrate photodetector is choosed for construction of novel Spice model and fabrication of OEIC chip, considered about both high responsivity and good response speed. A novel Spice model of photodetector is introduced for compatible-design of OEIC. At 780nm and 2.5V reverse bias, the simulated responsivity based on the Spice model is 0.251A/W, close to the measured value 0.253A/W. Finally, a full CMOS monolithic OEIC is successfully accomplished with a gain of 38.1mV/mu W in 780mn for optical-disc signal pickup.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70170]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cheng, Xiang,Bian, Jiantao,Chen, Chao,et al. Research of different structure integrated photodetectors in standard CMOS technology - art no 68381O[J],2008.
APA	Cheng, Xiang.,Bian, Jiantao.,Chen, Chao.,Chen, Wei.,Zhang, X.,...&陈朝.(2008).Research of different structure integrated photodetectors in standard CMOS technology - art no 68381O..
MLA	Cheng, Xiang,et al."Research of different structure integrated photodetectors in standard CMOS technology - art no 68381O".(2008).

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