Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver

CORC > 厦门大学 > 物理技术－已发表论文

	Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver
	Xie, S ; Chen, C ; Bian, JT ; Zah, CE ; Lou, Y ; Tsuji, S ; Chen C(陈朝)
刊名	http://dx.doi.org/10.1117/12.575448
	2005
关键词	MODEL AMPLIFIER OUTPUT NOISE POWER
英文摘要	Model is developed for the dc I-V characteristics and microwave small-signal parameters of the InP-based In(0.52)Al(0.28)As/In(0.65)Ga(0.35)As HEMT's based on physical principles, and the effect of the extrinsic source and drain resistances has also been included. Using the parameters obtained by this model and the small-signal model of PIN detector, we simulated the transimpedance configurations with an inverter and a cascode input circuit of monolithically integrated PIN-HEMT front-end optical receiver. The results indicate that the cascode input stage can realize a smaller input capacitance than the inverter-type, so it has a wider bandwidth. In order to operate in 2.5Gb/s transmission system, the cascode input stage is applied and the parameters are optimized. The simulations reveal that the transimpedance gain is larger than 63.2dB Omega and the sensitivity is 30dBm when the bit rate is 2.5Gb/s. The results obtained in this paper provide a guideline for the fabrication of PIN-HEMT optical receiver.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70164]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Xie, S,Chen, C,Bian, JT,et al. Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver[J]. http://dx.doi.org/10.1117/12.575448,2005.
APA	Xie, S.,Chen, C.,Bian, JT.,Zah, CE.,Lou, Y.,...&陈朝.(2005).Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver.http://dx.doi.org/10.1117/12.575448.
MLA	Xie, S,et al."Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver".http://dx.doi.org/10.1117/12.575448 (2005).