Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

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	Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
	Zhou, ZW ; He, JK ; Wang, RC ; Li, C ; Yu, JZ ; Li C(李成)
刊名	http://dx.doi.org/10.1016/j.optcom.2010.04.098
	2010-09-15
关键词	SI(100)
英文摘要	National Basic Research Program of China (973 Program) [2007CB613404]; Program for New Century Excellent Talents in University; We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip. (C) 2010 Elsevier B.V. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69555]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhou, ZW,He, JK,Wang, RC,et al. Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition[J]. http://dx.doi.org/10.1016/j.optcom.2010.04.098,2010.
APA	Zhou, ZW,He, JK,Wang, RC,Li, C,Yu, JZ,&李成.(2010).Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition.http://dx.doi.org/10.1016/j.optcom.2010.04.098.
MLA	Zhou, ZW,et al."Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition".http://dx.doi.org/10.1016/j.optcom.2010.04.098 (2010).