QQ客服 官方微博 反馈留言

	Epitaxial growth and luminescence characterization of Si-based double heterostructures light-einitting diodes with iron disilicide active region
	Li C(李成)
	2007
关键词	MOLECULAR-BEAM EPITAXY MU-M PHOTOLUMINESCENCE EMITTING DIODE BETA-FESI2 ELECTROLUMINESCENCE SILICON TEMPERATURE STRAIN FABRICATION LAYERS
英文摘要	We have epitaxially grown Si/beta-FeSi2/Si (SFS) structures with beta-FeSi2 particles or beta FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed a 1.6 mu m electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of beta-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (tau similar to 10 ns) and the other with a long decay time (tau similar to 100 ns). The short decay time was due to carrier recombination in beta FeSi2, whereas the long decay time was due presumably to a defect-related DI line in Si.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69532]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Li C. Epitaxial growth and luminescence characterization of Si-based double heterostructures light-einitting diodes with iron disilicide active region[J],2007.
APA	李成.(2007).Epitaxial growth and luminescence characterization of Si-based double heterostructures light-einitting diodes with iron disilicide active region..
MLA	李成."Epitaxial growth and luminescence characterization of Si-based double heterostructures light-einitting diodes with iron disilicide active region".(2007).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。