| Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) | |
| Yu, JZ ; Li, C ; Cheng, BW ; Wang, QM ; Richter, H ; Kittler, M ; Li C(李成) | |
| 2004 | |
| 关键词 | DBR (distributed bragg reflector) MQW (multiple quantum wells) optical fiber communication photodiode RCE-PD (resonant-cavity-enhanced photodiode) responsivity SiGe/Si SOI |
| 英文摘要 | Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%. |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://dspace.xmu.edu.cn/handle/2288/69531]  |
| 专题 | 物理技术－已发表论文 |
| 推荐引用方式 GB/T 7714 | Yu, JZ,Li, C,Cheng, BW,et al. Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)[J],2004. |
| APA | Yu, JZ.,Li, C.,Cheng, BW.,Wang, QM.,Richter, H.,...&李成.(2004).Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD).. |
| MLA | Yu, JZ,et al."Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)".(2004). |
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