Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities

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	Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities
	Zhu, Xianfang ; Zhu XF(朱贤方)
刊名	http://dx.doi.org/10.1109/NEMS.2006.334802
	2006
关键词	PREFERENTIAL AMORPHIZATION DEFECT ANNIHILATION SILICON IRRADIATION INSTABILITY CRYSTALLIZATION SHRINKAGE GERMANIUM LAYERS
英文摘要	The solid phase epitaxial regrowth of structurally modified amorphous silicon created by self-ion implantation into nanovoided crystalline silicon is investigated. It is demonstrated that although the modified amorphous silicon is fully reconstructed into single crystal during the epitaxial regrowth, both activation energy and atom attempt frequency for the regrowth are much higher than those of the typical amorphous Si induced by self-ion implantation into Si wafer without nanovoids. The novel regrowth kinetics indicates that the modified amorphous silicon would contain a very high concentration of dangling bonds, which are believed to result from dissociation of the nanovoids originally metastablized in crystalline silicon. The unparalleled sensitivity of SPEG provides an effective and simple way to detect and characterize the subtle structural changes at nanometer scale in amorphous Si.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69425]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhu, Xianfang,Zhu XF. Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities[J]. http://dx.doi.org/10.1109/NEMS.2006.334802,2006.
APA	Zhu, Xianfang,&朱贤方.(2006).Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities.http://dx.doi.org/10.1109/NEMS.2006.334802.
MLA	Zhu, Xianfang,et al."Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities".http://dx.doi.org/10.1109/NEMS.2006.334802 (2006).