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	Instability of nanocavities in amorphous silicon
	Zhu, X. F. ; Williams, J. S. ; Llewellyn, D. J. ; McCallum, J. C. ; Zhu XF(朱贤方)
	1999
关键词	ION-IMPLANTATION SI CAVITIES HYDROGEN COPPER FLOW AU
英文摘要	This letter demonstrates that, whereas nanocavities are quite stable in crystalline Si (c-Si), they are unstable in amorphous Si (a-Si). This behavior is illustrated by introducing a band of nanocavities into c-Si by H implantation, followed by annealing at 850 degrees C. Amorphization of the c-Si surrounding the nanocavities led to their disappearance. Transmission electron microscopy, Rutherford backscattering, and channeling and time resolved (optical) reflectivity were used to provide details of the cavity instability process by studying the amorphous Si after implantation and subsequent crystallization. Two possible reasons are suggested for the instability of nanocavities in a-Si. (C) 1999 American Institute of Physics. [S0003-6951(99)01916-6].
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69395]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhu, X. F.,Williams, J. S.,Llewellyn, D. J.,et al. Instability of nanocavities in amorphous silicon[J],1999.
APA	Zhu, X. F.,Williams, J. S.,Llewellyn, D. J.,McCallum, J. C.,&朱贤方.(1999).Instability of nanocavities in amorphous silicon..
MLA	Zhu, X. F.,et al."Instability of nanocavities in amorphous silicon".(1999).

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