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	Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
	Chen Cheng-Zhao ; Zheng Yuan-Yu ; Huang Shi-Hao ; Li Cheng ; Lai Hong-Kai ; Lai HK(赖洪凯) ; Chen Song-Yan ; Chen SY(陈松岩)
	2012-04
关键词	Ge epitaxial UHVCVD photoluminescence
英文摘要	Thick Ge epitaxial layers are grown on Si(001) substrates in the ultra-high vacuum chemical vapor deposition system by using the method of low temperature buffer layer combining strained layer superlattices. The microstructure and the optical properties of the Ge layers are characterized by double crystal X-ray diffraction, HRTEM, AFM and photoluminescence spectroscopy. The root-mean-square surface roughness of the Ge epilayer with a thickness of 880nm is about 0.24 nm and the full-width-at-half maximum of the Ge peak of the XRD profile is about 273 ''. The etch pit density related to threading dislocations is less than 1.5 x 10(6) cm(-2). The direct band transition photoluminescence is observed at room temperature and the photoluminescence peak is located at 1540 nm. It is indicated that the Ge epitaxial layer is of good quality and will be a promising material for Si-based optoelectronic devices; National Basic Research Program of China [2007CB613404]; National Natural Science Foundation of China [61036003, 60837001]; Fundamental Research Funds for the Central Universities [2010121056]
语种	英语
出版者	CHINESE PHYSICAL SOC
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/15611]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen Cheng-Zhao,Zheng Yuan-Yu,Huang Shi-Hao,et al. Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD[J],2012.
APA	Chen Cheng-Zhao.,Zheng Yuan-Yu.,Huang Shi-Hao.,Li Cheng.,Lai Hong-Kai.,...&陈松岩.(2012).Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD..
MLA	Chen Cheng-Zhao,et al."Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD".(2012).

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