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	Vanadium oxide thin films prepared by RF magnetron sputtering method
	Guo,DH ; Xu,FC ; Li,J ; Wu,ST ; Li,ZS ; Xu FC(徐方成)
	2004
关键词	ELECTROCHEMICAL PROPERTIES V2O5 RAMAN XPS
英文摘要	Conference Name:5th International Conference on Thin Film Physics and Applications. Conference Address: Shanghai, PEOPLES R CHINA. Time:MAY 31-JUN 02, 2004.; The vanadium oxide thin films were prepared by R.F. magnetron sputtering method under different deposition conditions. The microstructures of the samples have been investigated by XRD, XPS, and the Laser Scanning Confocal Microscope. By XRD and XPS, it was found that properly decreasing substrate temperature or increasing sputtering power, larger crystalline particle size and better crystalline orientation with V2O5 (001) after annealing can be gotten; Properly increasing substrate temperature or reducing sputtering power, the proportions of high valence vanadium oxides are increased. Based on our analyses, high-purity vanadium pentoxide films have been prepared by adjusting flux ratio of O-2 and Ar, substrate temperature, and sputtering power.
语种	英语
出处	http://dx.doi.org/10.1117/12.607548
出版者	SPIE-INT SOC OPTICAL ENGINEERING
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/85436]
专题	化学化工－会议论文
推荐引用方式 GB/T 7714	Guo,DH,Xu,FC,Li,J,et al. Vanadium oxide thin films prepared by RF magnetron sputtering method. 2004-01-01.

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