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	Germanium doping and impurities analysis on industrial scale mc-silicon ingot
	Li, Shuai ; Wu, Peng ; Zhao, Baitong ; Gao, Wenxiu ; Gao WX(高文秀)
	2012
关键词	Carbon Doping (additives) Germanium Industrial engineering Industry Ingots Nanostructured materials Oxygen Quartz Sintering Solar cells
英文摘要	Conference Name:2012 2nd International Conference on Mechanical Engineering, Industry and Manufacturing Engineering, MEIME 2012. Conference Address: Hefei, China. Time:June 23, 2012 - June 24, 2012.; International Science and Education Researcher Association; Beijing Gireida Education Research Center; VIP-Information Conference Center; With mc-silicon (multi-crystalline silicon) being the most favorable feedstock for solar cell, germanium was reported to be a promising dopant to improve the quality of silicon crystal growth. In this paper, we investigated the feasibility of germanium doping for industrial scale production. A homogeneously distribution of germanium across usable section is presented, and subsequently we optimized our recipe for better controlling it. Sopori etched pits were utilized to reveal dislocations in silicon wafers, and we found a reduced dislocations density in germanium doped samples. Carbon and oxygen are two inevitable significant impurities during silicon ingot casting. In this paper, experimental results showed the impact of carbon on minority charge carrier lifetime and on interstitial oxygen. In addition, Isostatic pressing method is proved to be very prospective for recycling quartz crucibles. 漏 (2012) Trans Tech Publications.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/AMM.164.207
出版者	Trans Tech Publications
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/85420]
专题	化学化工－会议论文
推荐引用方式 GB/T 7714	Li, Shuai,Wu, Peng,Zhao, Baitong,et al. Germanium doping and impurities analysis on industrial scale mc-silicon ingot. 2012-01-01.

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