Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy

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	Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy
	Zhang, Jie ; Jia, Jingchun ; Han, Lianhuan ; Yuan, Ye ; Tian, Zhong-Qun ; Tian, Zhao-Wu ; Zhan, Dongping ; Zhang J(张洁) ; Tian ZQ(田中群) ; Tian ZW(田昭武) ; Zhan DP(詹东平)
刊名	http://dx.doi.org/10.1021/jp5056446
	2014
关键词	Cystines Gallium arsenide Physical chemistry Reaction rates Scanning electron microscopy Scanning probe microscopy Semiconducting gallium
英文摘要	Confined etchant layer technique (CELT) has been proved an effective electrochemical microfabrication method for both 3D microstructures and a supersmooth surface. From a physical chemistry viewpoint, the confined etching system of n-GaAs includes an etchant generation reaction from Br- to Br2 (E) followed by two parallel reactions: the confining reaction between Br2 and l-cystine (C1), and the etching reaction between Br2 and n-GaAs (C2). In this paper, the homogeneous EC1 process is investigated first through the tip generation/substrate collection (TG/SC) mode of scanning electrochemical microscopy (SECM), and the reaction rate of C1 is determined as (8.0 ± 1.0) × 103 dm3 mol-1 s -1; second, the heterogeneous EC2 process is investigated through the feedback mode of SECM, and the reaction rate of C2 is determined as (3.2 ± 0.5) × 10-2 cm s-1; third, a deformed geometry finite element model is established to simulate the etching topography coupling E(C1C2) processes by using the obtained data. The theoretical profiles of pits etched at different concentrations of scavenger, l-cystine, are analyzed and compared with experimental results. This model allows the prediction of spatial resolution of CELT as a function of reaction rates of C1 and C2 but also of the concentration of scavenger. ? 2014 American Chemical Society.
语种	英语
出版者	American Chemical Society
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/89731]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Zhang, Jie,Jia, Jingchun,Han, Lianhuan,et al. Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy[J]. http://dx.doi.org/10.1021/jp5056446,2014.
APA	Zhang, Jie.,Jia, Jingchun.,Han, Lianhuan.,Yuan, Ye.,Tian, Zhong-Qun.,...&詹东平.(2014).Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy.http://dx.doi.org/10.1021/jp5056446.
MLA	Zhang, Jie,et al."Kinetic investigation on the confined etching system of n-type gallium arsenide by scanning electrochemical microscopy".http://dx.doi.org/10.1021/jp5056446 (2014).