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Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance; 基于电容和电导特性分析GaN蓝光发光二极管老化机理
Chen, HT ; Chen HT(陈焕庭) ; Lu, YJ ; Lv YJ(吕毅军) ; Chen, Z ; Chen Z(陈忠) ; Zhang, HB ; Zhang HB(张海兵) ; Gao, YL ; Gao YL(高玉琳) ; Chen, GL ; Chen GL(陈国龙)
2009-08
关键词ELECTRICAL CHARACTERISTICS NEGATIVE CAPACITANCE LEDS
英文摘要National High Technology Development Program of China [2006AA03A175]; Special Foundation for Major Program of Science and Technology of Fujian Province, China [2006110092]; Natural Science Foundation of Fujian Province, China [2008J0030]; study of the capacitance-voltage characteristics of GaN light emitting diode(LED) with a view to reveal its degradation mechanism is presented in this article by forward alternating current small-signal method., Combined with series resistance, ideality factor and tunneling current measurement, the properties of negative capacitance and conductance are discussed. The threshold voltage of negative capacitance during degradation is qualitatively analysed. The decreased negative capacitance during aging may be due to the decrease in the effective acceptor concentration and radiative recombination rate, and the increase of defects and non-radiative recombination centers resulting in the enhanced capture effect of carriers. The tunneling effect leads to the obvious increase of conductance under reversed and low-forward bias voltage. The decreased conductance during aging may be due to the series resistance. On the basis of the capacitance-voltage characteristic, light output, current-voltage curves with the degradation mechanism of LED, the characteristics of negative capacitance and conductance can be used as important evidence for the degradation analysis of LED as proved by experiment and theory.
语种英语
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/62038]  
专题化学化工-已发表论文
推荐引用方式
GB/T 7714
Chen, HT,Chen HT,Lu, YJ,et al. Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance, 基于电容和电导特性分析GaN蓝光发光二极管老化机理[J],2009.
APA Chen, HT.,陈焕庭.,Lu, YJ.,吕毅军.,Chen, Z.,...&陈国龙.(2009).Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance..
MLA Chen, HT,et al."Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance".(2009).
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