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	Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR
	Li, JJ ; Wang, RQ ; Liu, ZF ; Cai, SM ; Xiao, XY ; Sun, SG ; Sun SG(孙世刚)
	1999
关键词	porous silicon in situ FTIR electraluminescence
英文摘要	In situ FTIR spectra of porous silicon are measured during electroluminescence (EL). It was found that oxidation process of porous silicon surface occurs during EL, which is the main reason of the EL intensity decrease and red shift of peak energy with time.
语种	英语
出版者	GORDON BREACH SCI PUBL LTD
内容类型	期刊论文
源URL	[http://dx.doi.org/doi:10.1080/10587259908023492]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Li, JJ,Wang, RQ,Liu, ZF,et al. Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR[J],1999.
APA	Li, JJ.,Wang, RQ.,Liu, ZF.,Cai, SM.,Xiao, XY.,...&孙世刚.(1999).Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR..
MLA	Li, JJ,et al."Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR".(1999).

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