Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5

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	Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5
	Sa, B. ; Zhou, J. ; Sun, Z. ; Ahuja, R. ; Zhou J(周健)
刊名	http://dx.doi.org/10.1209/0295-5075/97/27003
	2012-01
关键词	PHASE-TRANSITION THIN-FILMS BI2TE3 SURFACE TEXTURE SB2TE3
英文摘要	National Natural Science Foundation of China [60976005]; Outstanding Young Scientists Foundation of Fujian Province of China [2010J06018]; program for New Century Excellent Talents in University [NCET-08-0474]; We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab initio calculations. The semiconductor-to-topological-insulator (TI) transition of Ge2Sb2Te5 were induced by the strains along the < 100 > and < 110 > direction as well as the shear strains. Ge2Sb2Te5 exhibits three types of TI-characterized conducting surface states: the single Dirac cone feature, the odd band-type and the Bi2Se3-type. The physical origin of the semiconductor-TI transition is the strain-induced inversion of the characterizations of conduction band minimum and valence band maximum with spin-orbit coupling. The present results suggest that GST-related materials are a new family of strain-induced TI. Copyright (C) EPLA, 2012
语种	英语
出版者	EPL-EUROPHYS LETT
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/87143]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Sa, B.,Zhou, J.,Sun, Z.,et al. Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5[J]. http://dx.doi.org/10.1209/0295-5075/97/27003,2012.
APA	Sa, B.,Zhou, J.,Sun, Z.,Ahuja, R.,&周健.(2012).Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5.http://dx.doi.org/10.1209/0295-5075/97/27003.
MLA	Sa, B.,et al."Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5".http://dx.doi.org/10.1209/0295-5075/97/27003 (2012).