应用于FED Al/Ag/Al导电复合薄膜的研究

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	应用于FED Al/Ag/Al导电复合薄膜的研究
	杨兰 ; 郭太良
刊名	http://epub.edu.cnki.net/grid2008/brief/detailj.aspx?filename=gncl201112047&dbcode=CJFQ&dbname=CJFQ2011
	2012-06-05 ; 2012-06-05
关键词	Al/Ag/Al 导电复合薄膜热处理电阻率 Al/Ag/Al electric composite films heat treatment resistivity TB383.2
其他题名	Study on Al/Ag/Al electric composite films applied in FED
中文摘要	利用Ag的高温抗氧化能力,采用磁控溅射沉积Al/Ag/Al导电复合薄膜,并在480℃下进行热处理。扫描电子显微镜(SEM)和能谱分析(EDS)研究表明磁控溅射的Al/Ag/Al导电复合薄膜表面平整,热处理后表面Al膜生成致密的氧化层。溅射沉积和热处理过程中Ag和Al原子的相互扩散,最后形成富Ag的Ag-Al合金和Ag3Al化合物。Al/Ag/Al导电复合薄膜比Ag/Al复合薄膜的电阻率增大了一个数量级,导电复合薄膜热处理后导电性能更优,电阻率约为19.4×10-6Ω.cm。; The Al/Ag/Al electric composite films were prepared by magnetron sputtering and treated at 480℃ due to the ability of oxidation resistance of Ag.The morphology and composite of Al/Ag/Al composite films were characterized by scanning electron microscope(SEM) and X-ray spectroscope(EDS),respectively.The results indicated the surface of composite films was oxidized in the process of heat treatment.The Ag-Al alloy with rich Ag and Ag3Al compound were produced for the interdiffusion between Ag and Al atoms during the magnetron sputtering and heat treating.The resistivity of Al/Ag/Al composite films was largened as a result of an Al layer at the surface,and which was about 19.4×10-6Ω·cm after heat treatment.; 【作者单位】集美大学理学院；福州大学物理与信息工程学院；【作者英文名】YANG Lan1,GUO Tai-liang2(1.College of Science,Jimei University,Xiamen 361021,China; 2.College of Physics and Information Engineering,Fuzhou University,Fuzhou 350002,China)
语种	中文
内容类型	期刊论文
源URL	[http://ir.calis.edu.cn/hdl/235041/15818]
专题	集美大学
推荐引用方式 GB/T 7714	杨兰,郭太良. 应用于FED Al/Ag/Al导电复合薄膜的研究[J]. http://epub.edu.cnki.net/grid2008/brief/detailj.aspx?filename=gncl201112047&dbcode=CJFQ&dbname=CJFQ2011,2012, 2012.
APA	杨兰,&郭太良.(2012).应用于FED Al/Ag/Al导电复合薄膜的研究.http://epub.edu.cnki.net/grid2008/brief/detailj.aspx?filename=gncl201112047&dbcode=CJFQ&dbname=CJFQ2011.
MLA	杨兰,et al."应用于FED Al/Ag/Al导电复合薄膜的研究".http://epub.edu.cnki.net/grid2008/brief/detailj.aspx?filename=gncl201112047&dbcode=CJFQ&dbname=CJFQ2011 (2012).