| Atomic Mechanisms Governing the Elastic Limit and the Incipient Plasticity of Bending Si Nanowires(英文发表) | |
| 郑坤 ; 韩晓东 ; 张跃飞 ; 张晓娜 ; 张泽 | |
| 2012-04-13 ; 2012-04-13 | |
| 中文摘要 | Individual single-crystal line Si nanowires (NWs) were bent by forming loops or arcs with different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of the radial and axial directions were calculated and mapped directly fro |
| 原文出处 | http://dlib.edu.cnki.net/kns50/download.aspx?filename=1VXRaVVMGpncyEzYURmYzs0TMVVM5cjUmpFUTVkW5N0cJxWb58kWLxESv9Cbht0UVVTOVZ0T5l0Zyt0UwxER14UMhdmZzQlZwQzZ0AFbTZ1YYhHSNVTWTpHRzBlTXlWd1NGdtFzVNVnbFdWdpFVOKZHUVdDTUZjR&tablename=CJFD2009&dflag=pdfdown 全文链接 |
| 其他责任者 | Zheng, K ; Han, X D ; Wang, L H ; Zhang, Y F ; Yue, Y H ; Qin, Y ; Zhang, X N ; Zhang, Z |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/16656]  |
| 专题 | 北京工业大学 |
| 推荐引用方式 GB/T 7714 | 郑坤,韩晓东,张跃飞,等. Atomic Mechanisms Governing the Elastic Limit and the Incipient Plasticity of Bending Si Nanowires(英文发表)[J],2012, 2012. |
| APA | 郑坤,韩晓东,张跃飞,张晓娜,&张泽.(2012).Atomic Mechanisms Governing the Elastic Limit and the Incipient Plasticity of Bending Si Nanowires(英文发表).. |
| MLA | 郑坤,et al."Atomic Mechanisms Governing the Elastic Limit and the Incipient Plasticity of Bending Si Nanowires(英文发表)".(2012). |
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