QQ客服 官方微博 反馈留言

	Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier
	Zhang W(张为) ; Song B(宋博) ; Fu J(付军) ; Wang YD(王玉东) ; Cui J(崔杰) ; Li GQ(李高庆) ; Zhang W(张伟) ; Liu ZH(刘志宏) ; Zhang Wei ; Song Bo ; Fu Jun ; Wang Yudong ; Cui Jie ; Li Gaoqing ; Zhang Wei ; Liu Zhihong
	2016-03-30 ; 2016-03-30
关键词	wideband dual-feedback low noise amplifier(LNA) SiGe heterojunction bipolar transistor wideband dual-feedback low noise amplifier(LNA) SiGe heterojunction bipolar transistor TN722
其他题名	Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier
中文摘要	A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.; A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
语种	英语 ; 英语
内容类型	期刊论文
源URL	[http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147050]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang W,Song B,Fu J,et al. Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier[J],2016, 2016.
APA	张为.,宋博.,付军.,王玉东.,崔杰.,...&Liu Zhihong.(2016).Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier..
MLA	张为,et al."Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier".(2016).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。