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	Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration
	Tiwei Wei ; Jian Cai ; Qian Wang ; Yang Hu ; Lu Wang ; Ziyu Liu ; Zijian Wu ; Tiwei Wei ; Jian Cai ; Qian Wang ; Yang Hu ; Lu Wang ; Ziyu Liu ; Zijian Wu
	2016-03-30 ; 2016-03-30
关键词	barrier/seed layer Through Silicon Via(TSV) sputtering optimization TB383.2
其他题名	Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration
中文摘要	The barrier/seed layer is a key issue in Through Silicon Via(TSV) technology for 3-D integration.Sputtering is an important deposition method for via metallization in semiconductor process. However,due to the limitation of sputtering and a "scallop" profile inside vias,poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper,the effects of several sputter parameters(DC power,Ar pressure,deposition time,and substrate temperature) on thin film coverage for TSV applications are investigated.Robust TSVs with aspect ratio 5 1 were obtained with optimized magnetron sputter parameters. In addition,the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets.; The barrier/seed layer is a key issue in Through Silicon Via(TSV) technology for 3-D integration.Sputtering is an important deposition method for via metallization in semiconductor process. However,due to the limitation of sputtering and a "scallop" profile inside vias,poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper,the effects of several sputter parameters(DC power,Ar pressure,deposition time,and substrate temperature) on thin film coverage for TSV applications are investigated.Robust TSVs with aspect ratio 5 1 were obtained with optimized magnetron sputter parameters. In addition,the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets.
语种	英语 ; 英语
内容类型	期刊论文
源URL	[http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147012]
专题	清华大学
推荐引用方式 GB/T 7714	Tiwei Wei,Jian Cai,Qian Wang,et al. Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration[J],2016, 2016.
APA	Tiwei Wei.,Jian Cai.,Qian Wang.,Yang Hu.,Lu Wang.,...&Zijian Wu.(2016).Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration..
MLA	Tiwei Wei,et al."Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration".(2016).

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