退火对HfO2/SiO2多层膜残余应力的影响

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	退火对HfO2/SiO2多层膜残余应力的影响; Annealing effects on residual stress of WO2/SiO2 multilayers
	申雁鸣 ; 韩朝霞 ; 邵建达 ; 邵淑英 ; 贺洪波
刊名	Chin. Opt. Lett.
	2008
卷号	6 期号:3 页码:225
关键词	退火 Annealing effects HfO2/SiO2多层膜 Electron beam evaporation 残余应力
ISSN号	1671-7694
其他题名	Annealing effects on residual stress of WO2/SiO2 multilayers
中文摘要	用电子束蒸发方法在BK7基底上沉积了HfO2/SiO2多层膜。研究了200℃到400℃的退火对残余应力的影响。结果表明退火前的薄膜残余应力为压应力，在200℃退火后发展为张应力，然后张应力值随着退火温度的升高而增大。在400℃退火后，由于张应力太大，薄膜表面出现了裂纹。同时，随着退火温度的升高，晶粒尺寸长大，晶面间距降低。残余应力的变化与结构的演变相对应。; HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method. The effects of annealing at the temperature between 200 and 400 degrees C on residual stresses have been studied. It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive. It becomes tensile after annealing at 200 degrees C, and then the value of tensile stress increases as annealing temperature increases. And cracks appear in the film because tensile stress is too large when the sample is annealed at 400 degrees C. At the same time, the crystallite size increases and interplanar distance decreases with the increase of annealing temperature. The variation of residual stresses is corresponding with the evolution of structures.
学科主题	光学薄膜
收录类别	EI
语种	英语
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4712]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	申雁鸣,韩朝霞,邵建达,等. 退火对HfO2/SiO2多层膜残余应力的影响, Annealing effects on residual stress of WO2/SiO2 multilayers[J]. Chin. Opt. Lett.,2008,6(3):225, 227.
APA	申雁鸣,韩朝霞,邵建达,邵淑英,&贺洪波.(2008).退火对HfO2/SiO2多层膜残余应力的影响.Chin. Opt. Lett.,6(3),225.
MLA	申雁鸣,et al."退火对HfO2/SiO2多层膜残余应力的影响".Chin. Opt. Lett. 6.3(2008):225.