Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation
	Zhan MQ(占美琼) ; Wu Zhong-Lin ; Fan Zheng-Xiu
刊名	chin. phys. lett.
	2008
卷号	25 期号:2 页码:563
关键词	INDUCED DAMAGE THRESHOLD ASSISTED DEPOSITION LASER DAMAGE COATINGS HFO2 SIO2
ISSN号	0256-307x
中文摘要	the effects of working pressure on properties of al2o3 thin films are investigated. transmittance of the al2o3 thin film is measured by a lambda 900 spectrometer. laser-induced damage threshold (lidt) is measured by a nd:yag laser at 355nm with a pulse width of 7ns. microdefects were observed under a nomarski microscope. the samples are characterized by optical properties and defect, as well as lidt under the 355 nm nd: yag laser radiation. it is found that the working pressure has fundamental effect on the lidt. it is the absorption rather than the microdefect that plays an important role on the lid t of al2o3 thin film.
学科主题	光学薄膜
语种	英语
WOS记录号	WOS:000253316600057
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4670]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Zhan MQ,Wu Zhong-Lin,Fan Zheng-Xiu. Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation[J]. chin. phys. lett.,2008,25(2):563, 565.
APA	占美琼,Wu Zhong-Lin,&Fan Zheng-Xiu.(2008).Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation.chin. phys. lett.,25(2),563.
MLA	占美琼,et al."Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation".chin. phys. lett. 25.2(2008):563.