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	Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes
	Lai Wang ; Hongtao Li ; Guangyi Xl ; Yang Jiang ; Wei Zhao ; Yanjun Han ; Yi Luo
	2010-10-12 ; 2010-10-12
关键词	Practical Experimental/ electroluminescence gallium compounds III-V semiconductors indium compounds light emitting diodes p-n junctions quantum well devices wide band gap semiconductors/ p-n junction location multiple quantum well light-emitting diodes LED current-voltage characteristics electroluminescence capacitance-voltage characteristics piezoelectric field current 20 mA InGaN-GaN/ B4260D Light emitting diodes/ current 2.0E-02 A/ InGaN-GaN/int InGaN/int GaN/int Ga/int In/int N/int InGaN/ss Ga/ss In/ss N/ss GaN/bin Ga/bin N/bin
中文摘要	InGaN/GaN mulliple-quantum-well (MQW) light-emitting diodes (LEDs) with different p-n junction locations have been investigated by current-voltage (I-V), electroluminescence (EL), and capacitance-voltage (C-V) measurements. At 20 mA injection current, the operating voltage of the LEDs decreases by 0.15 V, the EL intensity increases by 14% and the EL wavelength shifts from 465 to 455 nm owing to the shortening of the distance between n-InGaN/GaN MQW and p-type materials. C-V measurements indicate that only the quantum well immediately adjacent to the p-type region still remains inside the depletion region when LEDs are forward biased. Analysis reveals that the characteristics of the LEDs can be improved by optimizing the p-n junction location through the improvement of the holes' tunneling injection and weakening of the piezoelectric field in InGaN quantum wells.
语种	英语
出版者	Japan Society of Applied Physics through the Institute of Pure and Applied Physics ; Japan
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82792]
专题	清华大学
推荐引用方式 GB/T 7714	Lai Wang,Hongtao Li,Guangyi Xl,et al. Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes[J],2010, 2010.
APA	Lai Wang.,Hongtao Li.,Guangyi Xl.,Yang Jiang.,Wei Zhao.,...&Yi Luo.(2010).Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes..
MLA	Lai Wang,et al."Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes".(2010).

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