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	Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes
	Lai Wang ; Jiaxing Wang ; Hongtao Li ; Guangyi Xi ; Yang Jiang ; Wei Zhao ; Yanjun Han ; Yi Luo
	2010-10-12 ; 2010-10-12
关键词	Practical/ gallium compounds III-V semiconductors indium compounds interface states light emitting diodes magnesium quantum well devices semiconductor doping semiconductor quantum wells wide band gap semiconductors/ injection efficiency multiple quantum well blue light emitting diodes electrical efficiency injection current doping optimized concentration interface states blocking layer electron capability InGaN-GaN:Mg/ B4260D Light emitting diodes B2550B Semiconductor doping B2530C Semiconductor superlattices, quantum wells and related structures/ InGaN-GaN:Mg/int GaN:Mg/int InGaN/int GaN/int Ga/int In/int Mg/int N/int GaN:Mg/ss InGaN/ss Ga/ss In/ss Mg/ss N/ss GaN/bin Ga/bin N/bin Mg/el Mg/dop
中文摘要	The dependence of the electrical efficiency on the injection current was studied in detail in InGaN/GaN multiple quantum wells (MQWs) blue light emitting diodes. When the InGaN quantum well thickness increased from 2 to 3.5 nm, or the Al component in p-AIGaN changed from 0.1 to 0.2, it was found that the electrical efficiency decreased dramatically, while a thin Mg-doped GaN layer inserted between p-AIGaN and MQWs with optimized Mg concentration can enhance the electrical efficiency effectively. Analysis shows that the injection efficiency was dramatically affected by the interface states due to the strong stress at the interface between p-AIGaN blocking layer and MQWs active region and the capability of electrons arriving at the interface.
语种	英语
出版者	Japan Society of Applied Physics through the Institute of Pure and Applied Physics ; Japan
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82720]
专题	清华大学
推荐引用方式 GB/T 7714	Lai Wang,Jiaxing Wang,Hongtao Li,et al. Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes[J],2010, 2010.
APA	Lai Wang.,Jiaxing Wang.,Hongtao Li.,Guangyi Xi.,Yang Jiang.,...&Yi Luo.(2010).Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes..
MLA	Lai Wang,et al."Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes".(2010).

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