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	Dependence of GaN film sheet resistance on the N/sub 2/ carrier gas percentage
	Xi Guang-Yi ; Hao Zhi-Biao ; Wang Lai ; Li Hong-Tao ; Jiang Yang ; Zhao Wei ; Ren Fan ; Han Yan-Jun ; Sun Chang-Zheng ; Luo Yi
	2010-10-12 ; 2010-10-12
关键词	Experimental/ dislocation density edge dislocations electrical resistivity gallium compounds III-V semiconductors impurities MOCVD MOCVD coatings screw dislocations secondary ion mass spectra semiconductor epitaxial layers semiconductor growth surface roughness vapour phase epitaxial growth wide band gap semiconductors/ sheet resistance gallium nitride film N/sub 2/ carrier gas percentage metal organic vapor phase epitaxy high-temperature growth process surface root-mean-square roughness secondary ion mass spectroscopy carbon impurities oxygen impurities edge dislocation-related defect density screw-dislocation-related defect density edge threading dislocations acceptor centers GaN/ A7360L Electrical properties of II-VI and III-V semiconductors (thin films/low-dimensional structures) A8115H Chemical vapour deposition A6855 Thin film growth, structure, and epitaxy A6820 Solid surface structure A8280M Mass spectrometry (chemical analysis) A7920N Atom-, molecule-, and ion-surface impact and interactions A6170J Etch pits, decoration, transmission electron-microscopy and other direct observations of dislocations A6170L Slip, creep, internal friction and other indirect evidence of dislocations B0520F Chemical vapour deposition B2520D II-VI and III-V semiconductors/ GaN/bin Ga/bin N/bin
中文摘要	In this paper, GaN films are grown by metal organic vapor phase epitaxy. Different N/sub 2/ carrier gas percentages were used in the high-temperature growth process of the bulk GaN, and the dependence of sheet resistance on N/sub 2/ carrier gas percentage is studied. It is found that the sheet resistance of the GaN film increases dramatically with N/sub 2/ carrier gas percentage. When N/sub 2/ carrier gas percentage is 50%, the sheet resistance of the GaN film is 1.1 * 10/sup 8/ Omega /sq, and the surface root-mean-square roughness is as small as 0.233 nm. Secondary ion mass spectroscopy measurements reveal that the concentration of carbon and oxygen impurities is almost the same in the samples with different N/sub 2/ carrier gas percentage. The density of edge-dislocation-related defects increases with N/sub 2/ carrier gas percentage, while the density of screw-dislocation-related defects shows no obvious difference for all the samples. Our results indicate that the increase of the sheet resistance of GaN film is mainly due to the increase of edge threading dislocations, which act as acceptor centers in the GaN material.
语种	中文
出版者	Chinese Physical Society ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82536]
专题	清华大学
推荐引用方式 GB/T 7714	Xi Guang-Yi,Hao Zhi-Biao,Wang Lai,et al. Dependence of GaN film sheet resistance on the N/sub 2/ carrier gas percentage[J],2010, 2010.
APA	Xi Guang-Yi.,Hao Zhi-Biao.,Wang Lai.,Li Hong-Tao.,Jiang Yang.,...&Luo Yi.(2010).Dependence of GaN film sheet resistance on the N/sub 2/ carrier gas percentage..
MLA	Xi Guang-Yi,et al."Dependence of GaN film sheet resistance on the N/sub 2/ carrier gas percentage".(2010).

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