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	Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique
	Gui, D. ; Mo, Z. Q. ; Xing, Z. X. ; Huang, Y. H. ; Hua, Y. N. ; Zhao, S. P. ; Cha, L. Z.
	2010-10-12 ; 2010-10-12
关键词	Silicon oxynitride Secondary ion mass spectrometry Surface transient effect Cap layer Nitrogen profile MCs2+ Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter
中文摘要	Ultra-thin silicon oxynitride (SiOxNy) is the leading candidate to replace pure silicon oxide (SiO2) before high k dielectrics come into place because oxynitrides demonstrate several properties superior to those of the conventional gate oxides. The performance of the transistor was reported to depend on the N dose and its distribution in the gate oxide. Therefore, accurate characterization of SiOxNy is prerequisite to control the quality of the ultra-thin nitrided gate oxide. However, secondary ion mass spectrometry (SIMS) faces big challenges in analyzing ultra-thin gate oxide because of surface effect and matrix effect. In this work, MCs2+ (M stands for matrix element) was detected to reduce the matrix effect in depth pro. ling the ultrathin oxynitride. However, N pro. le was very close to the top surface if the oxynitirde was fabricated by decoupled plasma nitridation (DPN). With the conventional approach, the N dose was overestimated and the N pro. le was distorted near the top surface. To obtain a reliable N pro. le, the oxynitride was capped with a thin layer of oxide. The N pro. le of interest was hence in the region of sputtering equilibrium, i.e. the surface effect was minimized. As the results, reliable N dose and pro. le have been obtained. (C) 2008 Elsevier B. V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82321]
专题	清华大学
推荐引用方式 GB/T 7714	Gui, D.,Mo, Z. Q.,Xing, Z. X.,et al. Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique[J],2010, 2010.
APA	Gui, D..,Mo, Z. Q..,Xing, Z. X..,Huang, Y. H..,Hua, Y. N..,...&Cha, L. Z..(2010).Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique..
MLA	Gui, D.,et al."Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique".(2010).

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