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	Metal-insulator transition in Au-NiO-Ni dual Schottky nanojunctions
	Sun, Jia-Lin ; Zhao, Xingchen ; Zhu, Jia-Lin
	2010-10-12 ; 2010-10-12
关键词	X-RAY PHOTOELECTRON MEMORY COPPER NICKEL Engineering, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied
中文摘要	Ni nanowire arrays were fabricated through electrochemical deposition on a template. After a nanoscale NiO layer was formed on the top of the nanowires, a layer of Au paint was coated on the top of the nanowire arrays to construct Au-NiO-Ni dual Schottky nanojunctions, and the structure was characterized at different scales. Within a small range of voltages, extraordinary current jumps were observed at room temperature and at 77 K. The resistance switch effect can be repeated at room temperature, while switching is irreversible at low temperature. The significant change in resistance of the samples does not require doping and may find future applications.
语种	英语 ; 英语
出版者	IOP PUBLISHING LTD ; BRISTOL ; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/81585]
专题	清华大学
推荐引用方式 GB/T 7714	Sun, Jia-Lin,Zhao, Xingchen,Zhu, Jia-Lin. Metal-insulator transition in Au-NiO-Ni dual Schottky nanojunctions[J],2010, 2010.
APA	Sun, Jia-Lin,Zhao, Xingchen,&Zhu, Jia-Lin.(2010).Metal-insulator transition in Au-NiO-Ni dual Schottky nanojunctions..
MLA	Sun, Jia-Lin,et al."Metal-insulator transition in Au-NiO-Ni dual Schottky nanojunctions".(2010).

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