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Layered growth model and epitaxial growth structures for SiCAlN alloys
Liu, Zhaoqing ; Ni, Jun ; Su, Xiaoao ; Dai, Zhenhong
2010-10-12 ; 2010-10-12
关键词Layered growth Epitaxial growth Phase diagram SiCAlN alloys Polytype First-principle calculation TOTAL-ENERGY CALCULATIONS MOLECULAR-BEAM EPITAXY WAVE BASIS-SET SILICON-CARBIDE SOLID-SOLUTIONS ALUMINUM NITRIDE POLYTYPES SEMICONDUCTORS DEPOSITION SURFACES Physics, Condensed Matter
中文摘要Epitaxial growth structures for (SiC)(1-x)(AlN)(x) alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x = 1/6, 1/5, 1/4, 1/3 and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAIN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC)(1-x)(AlN)(x) alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth. (C) 2009 Elsevier B.V. All rights reserved.
语种英语 ; 英语
出版者ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/81581]  
专题清华大学
推荐引用方式
GB/T 7714
Liu, Zhaoqing,Ni, Jun,Su, Xiaoao,et al. Layered growth model and epitaxial growth structures for SiCAlN alloys[J],2010, 2010.
APA Liu, Zhaoqing,Ni, Jun,Su, Xiaoao,&Dai, Zhenhong.(2010).Layered growth model and epitaxial growth structures for SiCAlN alloys..
MLA Liu, Zhaoqing,et al."Layered growth model and epitaxial growth structures for SiCAlN alloys".(2010).
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