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	Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3
	Liu Jun ; Hu Jun ; He JinLiang ; Lin YuanHua ; Long WangCheng
	2010-10-12 ; 2010-10-12
关键词	ZnO varistors Y2O3 electrical properties deep trap levels ZINC-OXIDE VARISTORS GRAIN-BOUNDARIES VOLTAGE GRADIENT CERAMICS SEMICONDUCTORS Engineering, Multidisciplinary Materials Science, Multidisciplinary
中文摘要	In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented. Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3, and the average grain size of the specimens decreases from about 9.2 mu m to 4.5 mu m, with an increase in the addition of Y2O3 from 0 mol% to 3 mol%. The corresponding varistor's voltage gradient markedly increases from 462 V/mm to 2340 V/mm, while the nonlinear coefficient decreases from 22.3 to 11.5, respectively. Furthermore, the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies. The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases. These traps may be ascribed to the intrinsic defects of ZnO lattice.
语种	英语 ; 英语
出版者	SCIENCE PRESS ; BEIJING ; 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78778]
专题	清华大学
推荐引用方式 GB/T 7714	Liu Jun,Hu Jun,He JinLiang,et al. Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3[J],2010, 2010.
APA	Liu Jun,Hu Jun,He JinLiang,Lin YuanHua,&Long WangCheng.(2010).Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3..
MLA	Liu Jun,et al."Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3".(2010).

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