QQ客服 官方微博 反馈留言

	Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition
	He, Yue ; Zhang, Jizhong ; Yao, Wenqing ; Li, Dexing ; Teng, Xu
	2010-10-12 ; 2010-10-12
关键词	Titanium Residual stress MEVVA IBAD Nanohardness XRD SHAPE-MEMORY ALLOY TRIBOLOGICAL PROPERTIES SILICON RELAXATION ALUMINUM BEHAVIOR Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter
中文摘要	Ti films with a thickness of 1.6 mu m (group A) and 4.6 mu m (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 degrees C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth pro. le, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 degrees C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate. (C) 2008 Elsevier B. V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78493]
专题	清华大学
推荐引用方式 GB/T 7714	He, Yue,Zhang, Jizhong,Yao, Wenqing,et al. Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition[J],2010, 2010.
APA	He, Yue,Zhang, Jizhong,Yao, Wenqing,Li, Dexing,&Teng, Xu.(2010).Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition..
MLA	He, Yue,et al."Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。