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	Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process
	Huichao Zhu ; Iqbal, J. ; Hongjun Xu ; Dapeng Yu
	2010-10-12 ; 2010-10-12
关键词	Experimental/ annealing copper crystal defects crystal growth crystal structure II-VI semiconductors nanowires photoluminescence Raman spectra semiconductor doping semiconductor growth semiconductor quantum wires transmission electron microscopy ultraviolet spectra visible spectra zinc compounds/ Raman spectroscopy photoluminescence vapor-liquid-solid process copper doping ultrafine synthesized nanowires wurtzite structure high resolution transmission electron microscopy single crystalline structure crystalline growth UV spectra visible spectra near band edge transition defects annealing valence states Dingle model temperature 293 K to 298 K temperature 10 K ZnO:Cu/ A7865K Optical properties of II-VI and III-V semiconductors (thin films/low-dimensional structures) A7830G Infrared and Raman spectra in inorganic crystals A6170T Doping and implantation of impurities A7840G Visible and ultraviolet spectra of II-VI and III-V semiconductors A7855E Photoluminescence in II-VI and III-V semiconductors A6160 Crystal structure of specific inorganic compounds A8110 Methods of crystal growth and purification A6170A Annealing processes B2550B Semiconductor doping B2550N Nanometre-scale semiconductor fabrication technology B2530C Semiconductor superlattices, quantum wells and related structures B2550A Annealing processes in semiconductor technology B0510 Crystal growth B2520D II-VI and III-V semiconductors/ temperature 2.93E+02 to 2.98E+02 K temperature 1.0E+01 K/ ZnO:Cu/ss ZnO/ss Cu/ss Zn/ss O/ss ZnO/bin Zn/bin O/bin Cu/el Cu/dop
中文摘要	Highly Cu doped ZnO nanowires have been fabricated by vapor-liquid-solid (VLS) process. The average concentration of Cu in the ZnO nanowires is estimated to be 6 at. %. The ultrafine synthesized nanowires have diameters nearly 80 nm, while their average length lies in the range of 40 to 90 mu m. Raman spectroscopy shows that the Cu doped ZnO nanowires have a typical wurtzite structure. High resolution transmission electron microscopy (HRTEM) investigations of individual nanowires demonstrate that the nanowires have single crystalline structure in which the growth direction is oriented along the c axis. Room temperature photoluminescence spectrum of as prepared nanowires shows two emissions in UV and visible regions that can be ascribed to the near band edge (NBE) transition and defects respectively, while the spectrum of the annealed nanowires exhibits a red shift in UV and a suppression in visible bands. Furthermore, the low temperature (10 K) PL spectrum illustrates a novel dominant blue emission relating to the different valence states of Cu atoms in ZnO, which is explained on the basis of Dingle model.
语种	英语
出版者	American Institute of Physics ; USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78461]
专题	清华大学
推荐引用方式 GB/T 7714	Huichao Zhu,Iqbal, J.,Hongjun Xu,et al. Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process[J],2010, 2010.
APA	Huichao Zhu,Iqbal, J.,Hongjun Xu,&Dapeng Yu.(2010).Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process..
MLA	Huichao Zhu,et al."Raman and photoluminescence properties of highly Cu doped ZnO nanowires fabricated by vapor-liquid-solid process".(2010).

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