QQ客服 官方微博 反馈留言

	Integration of BiFeO3 thin films on Si wafer via a simple sol-gel method
	Wang, Yao ; Nan, Ce-Wen
	2010-10-12 ; 2010-10-12
关键词	BiFeO3 thin films Magnetic C-V characteristics ELECTRICAL-PROPERTIES Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter
中文摘要	Integration of BiFeO3 (BFO) films on Si substrate is desirable from an application point of view. The growth of (110)-textured BFO thin films with high quality on Si(100) substrate was realized by a seeding technique via a simple sot-gel method. Obviously switchable ferroelectric domains were observed, and in the meantime, the BFO films also exhibited a weak magnetization which somewhat showed dependence on the film thickness. Such an integration of the BFO films on Si constructed a metal/ferroelectric/insulator/semiconductor structure, which presented a memory feature as evidenced by capacitance-voltage hysteresis. (C) 2009 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE SA ; LAUSANNE ; PO BOX 564, 1001 LAUSANNE, SWITZERLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78434]
专题	清华大学
推荐引用方式 GB/T 7714	Wang, Yao,Nan, Ce-Wen. Integration of BiFeO3 thin films on Si wafer via a simple sol-gel method[J],2010, 2010.
APA	Wang, Yao,&Nan, Ce-Wen.(2010).Integration of BiFeO3 thin films on Si wafer via a simple sol-gel method..
MLA	Wang, Yao,et al."Integration of BiFeO3 thin films on Si wafer via a simple sol-gel method".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。