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	Ion-implantation-induced patterns formation on silicon substrates
	Hu, Yin ; Li, Zhengcao ; Zhang, Zhengjun
	2010-10-12 ; 2010-10-12
关键词	Carbon nanotubes Ion implantation Patterns CVD CARBON NANOTUBES GROWTH DEPOSITION SURFACE SITE Nanoscience & Nanotechnology Physics, Condensed Matter
中文摘要	Positive or negative silicon patterns (nanometers high or deep) were created on silicon substrates directly by xenon ion implantation, by compromising defects generated in silicon and surface sputtering. A diagram was Constructed to show how to produce positive or negative silicon patterns, by controlling the energy and dose of xenon ions. Interestingly, carbon nanotubes showed different growth behaviors on the Substrates with positive or negative patterns. Since the ion-implantation technique is well established and has been widely applied in semiconductor industries, this study might provide a simple method to fabricate nanometer-scale patterns. (C) 2009 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78360]
专题	清华大学
推荐引用方式 GB/T 7714	Hu, Yin,Li, Zhengcao,Zhang, Zhengjun. Ion-implantation-induced patterns formation on silicon substrates[J],2010, 2010.
APA	Hu, Yin,Li, Zhengcao,&Zhang, Zhengjun.(2010).Ion-implantation-induced patterns formation on silicon substrates..
MLA	Hu, Yin,et al."Ion-implantation-induced patterns formation on silicon substrates".(2010).

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