CORC  > 清华大学
Nd掺杂对Bi_4Ti_3O_(12)铁电薄膜的微结构和铁电性能的影响
谭丛兵 ; 钟向丽 ; 王金斌 ; 廖敏 ; 周益春 ; 潘伟 ; Tan Cong-Bing ; Zhong Xiang-Li ; Wang Jin-Bin ; Liao Min ; Zhou Yi-Chun ; Pan Wei
2010-06-10 ; 2010-06-10
关键词Nd掺杂 Bi4Ti3O12 拉曼频移 铁电性能 Nd doping, Bi_4Ti_3O_ 12 , Raman shift, ferroelectric properties O484
其他题名Effects of neodymium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films
中文摘要利用溶胶-凝胶法在Pt/Ti/SiO2/Si(100)衬底上制备了Nd掺杂Bi4Ti3O12(Bi4-xNdxTi3O12,x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi4Ti3O12薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi4Ti3O12薄膜的基本晶体结构.在掺杂量x<0.45时,Nd3+只取代类钙钛矿层中的A位Bi3+.当x=0.45时,样品剩余极化强度达最大值,在270kV.cm-1的电场下为32.7μC.cm-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd3+开始进入(Bi2O2)2+层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi2O2)2+层的结构,材料发生铁电-顺电相变.; The Bi_ 4-x Nd_ x Ti_3O_ 12 (x=0.00,0.30,0.45,0.75,0.85,1.00,1.50) ferroelectric thin films were prepared on the Pt/Ti/SiO_2/Si(100) substrates using sol-gel method. The effect of neodynium doping on the microstructures and ferroelectric properties of films were studied. The experimental results show that Nd~ 3+ only substitutes Bi~ 3+ in the pseudo-perovskite block when Nd content x is lower than 0.45. When Nd content x is about 0.45, the film has the largest remnant polarization (2P_r) of 32.7?μC·cm~ -2 at an applied field of about 270?kV·cm~ -1 . At x>0.45, part of Nd ions are incorporated into the (Bi_2O_2)~ 2+ block, which would change the microstructure of (Bi_2O_2)~ 2+ block and weaken its functions as the insulating layer and the space charge storage, resulting in the decrease of the 2P_r. When x=1.50, the dopout would destroy the structure of (Bi_2O_2)~ 2+ block, which leads to ferroelectric-paraelectric phase transition of the film.; 国家杰出青年科学基金(批准号:10525211); 教育部科技创新工程重大项目培育资金(批准号:076044); 湖南省自然科学基金(批准号:06JJ30022)资助的课题~~
语种中文 ; 中文
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/61587]  
专题清华大学
推荐引用方式
GB/T 7714
谭丛兵,钟向丽,王金斌,等. Nd掺杂对Bi_4Ti_3O_(12)铁电薄膜的微结构和铁电性能的影响[J],2010, 2010.
APA 谭丛兵.,钟向丽.,王金斌.,廖敏.,周益春.,...&Pan Wei.(2010).Nd掺杂对Bi_4Ti_3O_(12)铁电薄膜的微结构和铁电性能的影响..
MLA 谭丛兵,et al."Nd掺杂对Bi_4Ti_3O_(12)铁电薄膜的微结构和铁电性能的影响".(2010).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace