Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO<inf>2</inf> (100)

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 激光与光电子功能材料研发中心

	Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)
	Liu B. ; Zhang R. ; Xie Z.L. ; Kong J.Y. ; Yao J. ; Liu Q.J. ; Zhang Z. ; Fu D.Y. ; Xiu X.Q. ; Chen P. ; Han P. ; Shi Y. ; Zheng Y.D. ; Zhou S.M. ; Edwards G.
刊名	appl. phys. lett.
	2008
卷号	92 期号:26 页码:261906
关键词	Crystallographic properties GaN films M plane
ISSN号	0003-6951
中文摘要	the m-plane gan films grown on lialo2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. the williamson-hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to gan[0001] in the growth plane. the symmetric and asymmetric reciprocal space maps reveal the strain of m-plane gan to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. this anisotropic strain further separates the energy levels of top valence band at gamma point. the energy splitting as 37 mev as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 american institute of physics.
学科主题	光学材料;晶体
收录类别	EI
语种	英语
公开日期	2009-09-24
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/6115]
专题	上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式 GB/T 7714	Liu B.,Zhang R.,Xie Z.L.,et al. Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)[J]. appl. phys. lett.,2008,92(26):261906.
APA	Liu B..,Zhang R..,Xie Z.L..,Kong J.Y..,Yao J..,...&Edwards G..(2008).Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100).appl. phys. lett.,92(26),261906.
MLA	Liu B.,et al."Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)".appl. phys. lett. 92.26(2008):261906.