Growth, etching morphology and spectra of LiAlO2 crystal
Huang Taohua ; Zhou SM(周圣明) ; Teng Hao ; Lin Hui ; Wang Jun
刊名cryst. res. technol.
2008
卷号43期号:8页码:801
关键词gamma-LiAlO2 crystal Czochralski method etch pits spectra
ISSN号0232-1300
中文摘要gamma-lialo2 single crystal was successfully grown by czochralski method. the crystal quality was characterized by x-ray rocking curve and chemical etching. the effects of air-annealing and vapor transport equilibration (vte) on the crystal quality, etch pits and absorption spectra of lialo2 were also investigated in detail. the results show that the as-grown crystal has very high quality with the full width at half maximum (fwhm) of 17.7-22.6 arcsec. dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). the vte-treated slice has larger fwhm value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after vte treatment. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim.
学科主题光学材料;晶体
收录类别EI
语种英语
公开日期2009-09-24
内容类型期刊论文
源URL[http://ir.siom.ac.cn/handle/181231/6081]  
专题上海光学精密机械研究所_激光与光电子功能材料研发中心
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GB/T 7714
Huang Taohua,Zhou SM,Teng Hao,et al. Growth, etching morphology and spectra of LiAlO2 crystal[J]. cryst. res. technol.,2008,43(8):801, 805.
APA Huang Taohua,周圣明,Teng Hao,Lin Hui,&Wang Jun.(2008).Growth, etching morphology and spectra of LiAlO2 crystal.cryst. res. technol.,43(8),801.
MLA Huang Taohua,et al."Growth, etching morphology and spectra of LiAlO2 crystal".cryst. res. technol. 43.8(2008):801.
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