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	KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100)
	Wang, XD ; Peng, XF ; Zhang, DM
	2010-05-11 ; 2010-05-11
关键词	PLD technology KTN thin film single crystal quartz pulsed energy density annealing perovskite phase SIMULATION Physics, Multidisciplinary
中文摘要	Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). Since the thermal stress sustained by the quartz is relatively small, the limit temperature of the quartz substrates (300 degrees C) is much lower than that of the P-Si substrates (560 degrees C); the prepared thin film is at amorphous state. Increasing the pulsed laser energy density in the process incorporated with annealing the film after deposition at different temperatures converts the amorphous films into crystal. The optimal pulsed laser energy density and annealing temperature were 2.0 J/cm(2) and 600 degrees C, respectively. A discussion was made to understand the mechanism of film production at relatively low substrate temperature by PLD and effects of the annealing temperatures on the forming of the perovskite phase, and optimal conditions for the orientation of the crystal grain.
语种	英语 ; 英语
出版者	SCIENCE CHINA PRESS ; BEIJING ; 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/25891]
专题	清华大学
推荐引用方式 GB/T 7714	Wang, XD,Peng, XF,Zhang, DM. KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100)[J],2010, 2010.
APA	Wang, XD,Peng, XF,&Zhang, DM.(2010).KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100)..
MLA	Wang, XD,et al."KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100)".(2010).

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