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	Influence of titanium ions implantation on corrosion behavior of zirconium in 1 M H2SO4
	Peng, DQ ; Bai, XD ; Pan, F ; Sun, H ; Chen, BS
	2010-05-10 ; 2010-05-10
关键词	zirconium corrosion resistance titanium ion implantation X-ray photoemission spectroscopy (XPS) Auger electron spectroscopy (AES) PASSIVE FILMS TRIBOLOGICAL PROPERTIES ZIRCALOY-4 NITROGEN STEEL TI RESISTANCE SAPPHIRE CHROMIUM IRON Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter
中文摘要	In order to study the effect of titanium ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted with titanium ions with fluence ranging from 1 X 10(16) to 1 X 10(17) ions/cm(2), using a metal vapor vacuum arc (MEVVA) source at an extraction voltage of 40 kV The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zirconium in a 1 M H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zirconium implanted with titanium ions. The larger the fluence, the better is the corrosion resistance of implanted sample. Finally, the mechanism of the corrosion behavior of titanium-implanted zirconium was discussed. (c) 2005 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/21799]
专题	清华大学
推荐引用方式 GB/T 7714	Peng, DQ,Bai, XD,Pan, F,et al. Influence of titanium ions implantation on corrosion behavior of zirconium in 1 M H2SO4[J],2010, 2010.
APA	Peng, DQ,Bai, XD,Pan, F,Sun, H,&Chen, BS.(2010).Influence of titanium ions implantation on corrosion behavior of zirconium in 1 M H2SO4..
MLA	Peng, DQ,et al."Influence of titanium ions implantation on corrosion behavior of zirconium in 1 M H2SO4".(2010).

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