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	In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates
	Liang, YC ; Lee, HY ; Liu, HJ ; Wu, TB
	2010-05-10 ; 2010-05-10
关键词	in situ X-ray diffraction and reflectivity interface superlattices surface structure X-RAY-SCATTERING CRITICAL LAYER THICKNESS THIN-FILMS GIANT MAGNETORESISTANCE DISLOCATION ARRAYS DIFFRACTION ROUGHNESS STRAIN MULTILAYERS EVOLUTION Crystallography
中文摘要	The onset of lattice strain relaxation against the number of bilayers (N) in an epitaxial BaTiO3 (3 nm)/LaNiO3 (3 nm) superlattice grown on a SrTiO3 (0 0 1) substrate was characterized in situ by X-ray diffraction and reflectivity measurements with synchrotron radiation. At the initial stage of superlattice growth, highly strained and smooth sublayers were found, indicating the repetition of two-dimensional nuclei and growth of the sublayer on the flat terrace of a SrTiO3 substrate; on increasing the bilayer number to N = 10, the growth front becomes rougher to relieve the lattice strain. Further increasing the bilayer number to N = 11, an abrupt increase of interfacial roughness is also followed. It corresponds to the effective critical thickness for pseudomorphic growth of a superlattice, beyond which surface and interface undulation result from the generation of interfacial misfit dislocations. (c) 2004 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/20790]
专题	清华大学
推荐引用方式 GB/T 7714	Liang, YC,Lee, HY,Liu, HJ,et al. In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates[J],2010, 2010.
APA	Liang, YC,Lee, HY,Liu, HJ,&Wu, TB.(2010).In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates..
MLA	Liang, YC,et al."In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates".(2010).

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