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	Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
	Pan, F. ; Song, C. ; Liu, X.J. ; Yang, Y.C. ; Zeng, F.
	2010-05-10 ; 2010-05-10
关键词	Bibliography Experimental/ annealing cobalt doping profiles ferromagnetic materials ferromagnetism II-VI semiconductors magnetic moments magnetic thin films magnetic tunnelling magnetoelectronics semiconductor thin films semimagnetic semiconductors spin polarised transport wide band gap semiconductors zinc compounds/ intrinsic ferromagnetism spintronics transition-metal-doped films magnetic properties diluted magnetic oxides doping elements doping concentrations post-annealing temperature codoping ferromagnetic ordering structural defects magnetic tunnel junctions spin field-effect transistors spin injection magnetic moments ZnO:Co/ A7570A Magnetic properties of monolayers and overlayers A7550D Ferromagnetism of nonmetals A7550P Magnetic semiconductors A6170W Impurity concentration, distribution, and gradients A6170A Annealing processes A7225 Spin polarized transport A7530C Magnetic moments and susceptibility in magnetically ordered materials B3120J Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices B2550A Annealing processes in semiconductor technology B2550B Semiconductor doping/ ZnO:Co/ss ZnO/ss Co/ss Zn/ss O/ss ZnO/bin Zn/bin O/bin Co/el Co/dop
中文摘要	This review article first presents a summary of current understanding of the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics. The local structure and magnetic behavior of TM-doped ZnO are strongly sensitive to the preparation parameters. In the second part, we discuss in detail the effects of doping elements and concentrations, oxygen partial pressure, substrate and its orientation and temperature, deposition rate, post-annealing temperature and co-doping on the local structure and subsequent ferromagnetic ordering of TM-doped ZnO. It is unambiguously demonstrated that room-temperature ferromagnetism is strongly correlated with structural defects, and the carriers involved in carrier-mediated exchange are by-products of defects created in ZnO. The third part focuses on recent progress in TM-doped ZnO-based spintronics, such as magnetic tunnel junctions and spin field-effect transistors, which provide a route for spin injection from TM-doped ZnO to ZnO. Thus, TM-doped ZnO materials are useful spin sources for spintronics. [All rights reserved Elsevier].
语种	英语 ; 英语
出版者	Elsevier Sequoia S.A. ; Switzerland
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/20655]
专题	清华大学
推荐引用方式 GB/T 7714	Pan, F.,Song, C.,Liu, X.J.,et al. Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films[J],2010, 2010.
APA	Pan, F.,Song, C.,Liu, X.J.,Yang, Y.C.,&Zeng, F..(2010).Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films..
MLA	Pan, F.,et al."Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films".(2010).

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