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	The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing
	Xu, J. ; Luo, J. B. ; Wang, L. L. ; Lu, X. C.
	2010-05-10 ; 2010-05-10
会议名称	TRIBOLOGY INTERNATIONAL ; First International Conference on Advanced Tribology (ICAT2004) ; Singapore, SINGAPORE ; Web of Science
关键词	chemical mechanical polishing silicon wafer sub-surface damage crystallographic change INDENTATION Engineering, Mechanical
中文摘要	The effect of the contact nominal pressure on the surface roughness and sub-surface deformation in chemical mechanical polishing (CMP) process has been investigated. The experimental results show that a better surface quality can be obtained at the lower pressure, and the thickness of sub-surface deformation layer increases with the increase of the pressure. In CMP process, polishing not only introduces amorphous transformation but also brings a silicon oxide layer with a thickness of 2-3 nm on the top surface. The atomic structure of the material inside the damage layer changes with the normal pressure. Under a higher pressure (125 kPa), there are a few crystal grain packets surrounded by the amorphous region in which the lattice is distorted, and a narrow heavy amorphous deformation band appears on the deformation region side of the interface. Under a lower pressure, however, an amorphous layer can only be observed. (c) 2006 Published by Elsevier Ltd.
会议录出版者	ELSEVIER SCI LTD ; OXFORD ; THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/19157]
专题	清华大学
推荐引用方式 GB/T 7714	Xu, J.,Luo, J. B.,Wang, L. L.,et al. The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing[C]. 见:TRIBOLOGY INTERNATIONAL, First International Conference on Advanced Tribology (ICAT2004), Singapore, SINGAPORE, Web of Science.

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