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	Effect of Li content on microstructure and dielectric properties of LixTiyNi1-x-yO thin films
	Zhang, Bo-Ping ; Zhang, Ya-Ru ; Dong, Yan ; Li, Jing-Feng ; Chen, Can
	2010-05-10 ; 2010-05-10
会议名称	FERROELECTRICS ; 5th Asian Meeting on Ferroelectrics (AMF-5) ; Noda, JAPAN ; Web of Science
关键词	LiTiNiO thin film Li doping dielectric properties sol-gel NIO FERROELECTRICS COMPOSITES BATTERIES CATHODES Materials Science, Multidisciplinary Physics, Condensed Matter
中文摘要	Li and Ti co-doped NiO thin films of 250 nm in thickness were deposited onto Pt/Ti/SiO2/Si(100) substrates using a sol-gel spin-coating method. The effect of Li doping content on microstructure and dielectric properties of the LixTyNi1-x-yO thin films in which the Ti content was fixed at 2 and 20 at% was investigated. All the thin films consisted of a mixture of NiO, NiTiO3, Li2NiO2 and/or LiNiO7 phases and show the high dielectric constant ranged from 235-370 in 100 Hz depending on the proportion of various phases. Excess Li content which results in increasing Li2NiO2 and the formation of LiNiO2 led to decrease the dielectric constant especially for the 2% Ti containing thin films in 100 Hz. The increased NiTiO3 and Li-dissolved Ni(Li)O phases by increasing Ti content from 2 to 20 at% is more beneficial for the formation of the core-shell like microstructure and hence enhancing the dielectric constant. However, the frequency stability of the dielectric constants was lowered by the formation of the excess NiTiO3 phase as Ti content was increased from 2 to 20 at%. The doping content of Li and Ti is necessary to control in an appropriate range in order to obtain the high dielectric property.; Tokyo Univ Sci
会议录出版者	TAYLOR & FRANCIS LTD ; ABINGDON ; 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/18563]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, Bo-Ping,Zhang, Ya-Ru,Dong, Yan,et al. Effect of Li content on microstructure and dielectric properties of LixTiyNi1-x-yO thin films[C]. 见:FERROELECTRICS, 5th Asian Meeting on Ferroelectrics (AMF-5), Noda, JAPAN, Web of Science.

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