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	Microstructure and ferroelectric properties of Bi3TiTaO9 thin films by metalorganic decomposition method
	Xie, D ; Zhang, ZG ; Ren, TL ; Liu, LT
	2010-05-07 ; 2010-05-07
会议名称	INTEGRATED FERROELECTRICS ; 17th International Symposium on Integrated Ferroelectrics ; Shanghai, PEOPLES R CHINA ; Web of Science
关键词	layer-structured ferroelectrics Bi3TiTaO9 microstructure ferroelectric properties MOD SOLID-SOLUTION DEPOSITION BI3TINBO9 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter
中文摘要	Bismuth titanium tantalum-Bi3TiTaO9 (BTT) thin films with different thickness from 100 nm to 400 nm were successfully fabricated on Pt/Ti/SiO2/Si(100) substrates using modified metalorganic decomposition (MOD) technique at different annealing temperatures. The microstructure of BTT thin films was affected by the film thickness and process temperature. Definite c-axis orientation growth of BTT thin films was found for Pt/Ti/SiO2/Si(100) substrate. The c-orientation ratio and grain size increased with the increase of post annealing temperature. The grain size in BTT thin films annealed at 750 degrees C and 800 degrees C was about 90 greater than or similar to 100 nm and 150 greater than or similar to 180 nm, respectively. The higher the process temperature, the higher the c-axis orientation of BTT thin film was. The growth of BTT thin film was affected by the microstructure of the lower layer and the effect of substrate. BTT thin films annealed at 800 degrees C was found to have much improved remanent polarization (P-r) than that at 650 degrees C and 750 degrees C. The P-r and E-c values were measured to be 2 mu C/cm(2) and 100 kV/cm, respectively. The critical grain size existed in BTT thin films, and BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
会议录出版者	TAYLOR & FRANCIS LTD ; ABINGDON ; 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16844]
专题	清华大学
推荐引用方式 GB/T 7714	Xie, D,Zhang, ZG,Ren, TL,et al. Microstructure and ferroelectric properties of Bi3TiTaO9 thin films by metalorganic decomposition method[C]. 见:INTEGRATED FERROELECTRICS, 17th International Symposium on Integrated Ferroelectrics, Shanghai, PEOPLES R CHINA, Web of Science.

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