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	Fabrication process of sol-gel spin coating for SrBi/sub 2/Ta /sub 2/O/sub 9/ films applied to FeRAM
	Jia Ze ; Ren Tian-Ling ; Zhang Zhi-Gang ; Liu Tian-Zhi ; Wen Xin-Yi ; Dan, X. ; Liu Li-Tian
	2010-05-07 ; 2010-05-07
关键词	Practical Experimental/ annealing bismuth compounds ferroelectric capacitors ferroelectric storage ferroelectric thin films sol-gel processing strontium compounds/ fabrication process sol-gel spin coating FeRAM spin rates anneal conditions ferroelectric layer materials ferroelectric random access memory capacitor hysteresis loops remanent polarization coercive voltage thickness grain size crystallization processes ion damages etching top electrode leakage current characteristics positive voltage bias SrBi/sub 2/Ta/sub 2/O/sub 9/ Pt/ B2860F Ferroelectric devices B2810F Piezoelectric and ferroelectric materials B1265D Memory circuits/ SrBi2Ta2O9/int Bi2/int Ta2/int Bi/int O9/int Sr/int Ta/int O/int SrBi2Ta2O9/ss Bi2/ss Ta2/ss Bi/ss O9/ss Sr/ss Ta/ss O/ss Pt/int Pt/el
中文摘要	We investigate SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory (FeRAM). All the specimens in this experiment have similar SBT crystal orientations of (115), (020), (220), and (135). The Pt/SBT/Pt capacitor with coating of 3000 rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.57 mu C/cm/sup 2 / and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500 rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.
语种	英语 ; 英语
出版者	Chinese Phys. Soc ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16649]
专题	清华大学
推荐引用方式 GB/T 7714	Jia Ze,Ren Tian-Ling,Zhang Zhi-Gang,et al. Fabrication process of sol-gel spin coating for SrBi/sub 2/Ta /sub 2/O/sub 9/ films applied to FeRAM[J],2010, 2010.
APA	Jia Ze.,Ren Tian-Ling.,Zhang Zhi-Gang.,Liu Tian-Zhi.,Wen Xin-Yi.,...&Liu Li-Tian.(2010).Fabrication process of sol-gel spin coating for SrBi/sub 2/Ta /sub 2/O/sub 9/ films applied to FeRAM..
MLA	Jia Ze,et al."Fabrication process of sol-gel spin coating for SrBi/sub 2/Ta /sub 2/O/sub 9/ films applied to FeRAM".(2010).

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