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Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncrystalline phase
Wang, Longhai ; Yu, Jun ; Wen, Xin'yi ; Wang, Yunbo ; Gao, Junxiong ; Liu, Feng ; Wei, Chaogang ; Ren, Tianling
2010-05-07 ; 2010-05-07
关键词THIN-FILMS RECOVERY PLASMA DAMAGE PB Physics, Applied
中文摘要Uniformly patterned Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt capacitor arrays were etched in noncrystalline phase. The ferroelectric layer was well crystallized and contains uniform grains. The capacitors exhibit well-saturated hysteresis loop and excellent fatigue properties in terms of larger saturation polarization P-max of 53.2 mu C/cm(2) at an applied voltage of 12 V, higher remnant polarization P-r of 30.5 mu C/cm(2) for a coercive field of 58 kV/cm, remnant polarization of about 81.2% at 10(10) switching cycles, and a low leakage current density of 10(-8) A/cm(2) at an applied voltage of 3 V. The etching effects on the properties of capacitor were reduced to minimal values, confirmed by scanning electron microscope, energy-dispersive x-ray microanalysis, and piezoresponse force microscopy results. The reliable electric properties and fine profile of the patterns indicate that the capacitors are suitable for ferroelectric random access memories and other integrated ferroelectric devices. (c) 2006 American Institute of Physics.
语种英语 ; 英语
出版者AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/16420]  
专题清华大学
推荐引用方式
GB/T 7714
Wang, Longhai,Yu, Jun,Wen, Xin'yi,et al. Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncrystalline phase[J],2010, 2010.
APA Wang, Longhai.,Yu, Jun.,Wen, Xin'yi.,Wang, Yunbo.,Gao, Junxiong.,...&Ren, Tianling.(2010).Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncrystalline phase..
MLA Wang, Longhai,et al."Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncrystalline phase".(2010).
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